Type 2N2222A
Geometry
0400
Polarity NPN
Qual Level: JAN - JANS
Data Sheet No. 2N2222A
Generic Part Number:
2N2222A
REF: MIL-PRF-19500/255
Features:
General-purpose transistor for
switching and amplifier applica-
tons.
Housed in
TO-18
case.
Also available in chip form using
the
0400
chip geometry.
The Min and Max limits shown are
per
MIL-PRF-19500/255
which
Semicoa meets in all cases.
The Typ values are actual batch
averages for Semicoa.
Radiation Graphs available.
Rating
Symbol
Rating
Unit
Collector-Emitter Voltage
V
CEO
50
V
Collector-Base Voltage
V
CBO
75
V
Emitter-Base Voltage
V
EBO
6.0
V
Collector Current, Continuous
I
C
800
mA
Operating Junction Temperature
T
J
-65 to +200
o
C
Storage Temperature
T
STG
-65 to +200
o
C
Maximum Ratings
T
C
= 25
o
C unless otherwise specified
TO-18
Data Sheet No. 2N2222A
OFF Characteristics
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage
I
C
= 10 A
Collector-Emitter Breakdown Voltage
I
C
= 10 mA
Emitter-Base Breakdown Voltage
I
E
= 10 A
Collector-Emitter Cutoff Current
V
CE
= 50 V
Collector-Base Cutoff Current
V
CB
= 60 V
Emitter-Base Cutoff Current
V
EB
= 4 V
nA
nA
V
Electrical Characteristics
T
C
= 25
o
C unless otherwise specified
V
V
nA
V
(BR)CBO
75
---
120
V
(BR)CEO
50
---
65
V
(BR)EBO
6.0
---
7.0
I
CES
---
50
3.0
I
EBO
---
10
0.5
I
CBO1
---
10
2.0
ON Characteristics
Symbol
Min
Typ
Max
Unit
DC Current Gain
I
C
= 100 A, V
CE
= 10 V
h
FE1
50
180
---
---
I
C
= 1.0 mA, V
CE
= 10 V
h
FE2
75
200
325
---
I
C
= 10 mA, V
CE
= 10 V
h
FE3
100
200
---
---
I
C
= 150 mA, V
CE
= 10 V (pulse test)
h
FE4
100
200
300
---
I
C
= 500 mA, V
CE
= 10 V (pulse test)
h
FE5
30
75
---
---
Collector-Emitter Saturation Voltage
I
C
= 150 mA, I
B
= 15 mA (pulse test)
V
CE(sat)1
---
0.1
0.3
V dc
I
C
= 500 mA, I
B
= 50 mA (pulse test)
V
CE(sat)2
---
0.3
1.0
V dc
Base-Emitter Saturation Voltage
I
C
= 150 mA, I
B
= 15 mA (pulse test)
V
BE(sat)1
0.6
0.85
1.2
V dc
I
C
= 500 mA, I
B
= 50 mA (pulse test)
V
BE(sat)2
---
1.0
2.0
V dc
Small Signal Characteristics
Symbol
Min
Typ
Max
Unit
Short Circuit Forward Current Transfer Ratio
I
C
= 1 mA, V
CE
= 10 V, f = 1kHz
Open Circuit Output Capacitance
V
CB
= 10 V, I
E
= 0 V, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
V
EB
= 0.5 V, I
C
= 0, 100 kHz < f < 1 MHz
pF
C
OBO
---
4.5
8
pF
AC h
FE
50
240
---
C
IBO
---
17.5
25
---
Switching Characteristics
Symbol
Min
Typ
Max
Unit
Saturated Turn On Switching Time to 90%
16V, 50 ohm input pulse
Saturated Turn Off Switching Time to 10%
16V, 50 ohm input pulse
ns
t
OFF
---
175
300
ns
t
ON
---
14
35